KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction ...
Together, they aim to co-develop a two-megawatt superconducting motor. “Partnering with Toshiba presents a unique opportunity ...
Toshiba Electronics Europe GmbH (Toshiba) announces a new video that showcases its successful partnership with PROMISE ...
It also uses the new SO12L-T package, which is 25% smaller[2] than Toshiba's SO16L-T package. This helps to miniaturize the battery unit and allows cost reduction. The pin pitch and pin layout are ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide ...