Faster and more efficient storage chips are coming. Today Micron announced the world's first G9-based UFS 4.1 and UFS 3.1 storage solutions ...

Ever since then, I've always allowed storage to play a notable part in the decision-making process for new phones, and with Micron introducing UFS 4.1 and UFS 3.1, the ceiling has been raised.

DDR5 memory chip samples this week, and it says this is part of its contribution to systems that keep up with AI.

Micron (MU) Technology announced its low-power double data rate memory and universal flash storage 4.0 are featured in select devices in the Samsung (SSNLF) Galaxy S25 series, which introduces ...

Micron Technology is a top AI-driven investment with 38% upside potential, strong growth prospects, and industry-leading ...

In addition, Micron showcased the world's first G9-based UFS 4.1 and UFS 3.1 mobile storage solutions. Leveraging the G9 process node, these solutions offer significant speed and power efficiency ...

Micron’s high-bandwidth LPDDR5X memory and advanced UFS 4.0 storage are embedded into select Galaxy S25 Ultra, Galaxy S25+ and Galaxy S25 devices, accelerating real-time AI processing at ...

Q2 2025 Results Conference Call March 20, 2025 4:30 PM ET. Company Participants. Satya Kumar - Corporate Vice President, Investor Relations and ...