Figure 1: The epilayer structure of an InGaN green laser diode on a c-sapphire substrate. The key to the success of Miyoshi et. al. was their ability to improve the quality of the InGaN active layers.

The GH04P25A4G laser diode features a proprietary facet structure and its ultracompact dimensions (3.3 mm diameter) make it suitable for use in notebook Blu-ray drives. The other model (GH04P25A2G ...

Topics include: Device structure for pn junction ... we will cover the following topics: Basic operating principles of LEDs, Survey of LEDs, Blue LED and solid state lighting, Basic principle of ...